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2MBI150TA-060-50 FUJI Dual IGBT Module 600V 150A High-Speed Power Semiconductor for Industrial Applications

2MBI150TA-060-50 FUJI Dual IGBT Module 600V 150A High-Speed Power Semiconductor for Industrial Applications

Szczegóły produktu:
Miejsce pochodzenia: JAPONIA
Nazwa handlowa: Fuji
Orzecznictwo: COO & COC
Numer modelu: 2MBI150TA-060-50
Szczegółowe informacje
Miejsce pochodzenia:
JAPONIA
Nazwa handlowa:
Fuji
Orzecznictwo:
COO & COC
Numer modelu:
2MBI150TA-060-50
Waga przesyłki:
0,32 kg
Rozmiar opakowania:
94 × 34 × 30 mm
Stan:
Zupełnie nowy i oryginalny
Gwarancja:
1 rok
Warunki handlowe::
EXW, DAP, FOB, CIF
Doręczenie ekspresowe:
DHL, FedEx, UPS
Podkreślić:

High Light

Podkreślić:

FUJI Dual IGBT Module 600V 150A

,

High-Speed Power Semiconductor for Industrial

,

IGBT Module with warranty

Trading Information
Minimalne zamówienie:
1
Cena:
$25
Szczegóły pakowania:
Zupełnie nowy i oryginalny
Czas dostawy:
3-5 dni
Zasady płatności:
T/T, AliPay, PayPal
Możliwość Supply:
99+
Opis produktu

2MBI150TA-060-50 FUJI Dual IGBT Module 600V 150A High-Speed Power Semiconductor for Industrial Applications


The FUJI 2MBI150TA-060-50 is a high-performance dual IGBT module engineered for reliable power conversion applications across industrial motor drives, uninterruptible power supplies, welding equipment, and renewable energy systems. This advanced 600V 150A power semiconductor delivers exceptional switching performance and thermal efficiency for demanding industrial power electronics environments.
Featuring high-speed switching technology, the 2MBI150TA-060-50 provides rapid turn-on and turn-off capabilities with minimal switching losses, enabling efficient power conversion in high-frequency applications. The module's low inductance design minimizes voltage spikes and electromagnetic interference, ensuring stable operation and protecting connected equipment from transient damage.
The IGBT module incorporates robust ceramic substrate construction with direct copper bonding technology ensuring excellent thermal conductivity and mechanical stability. Its isolated package design provides electrical isolation between the semiconductor die and mounting base, enabling safe operation in high-voltage applications. The low VCE(sat) characteristics minimize conduction losses during normal operation, improving overall system efficiency and reducing heat generation.


Product Overview: Fuji 2MBI150TA-060-50



Parameter Specification
Brand FUJI Electric
Model Number 2MBI150TA-060-50
Type Dual IGBT Module
Package Type 2 in one package
Collector-Emitter Voltage (VCEO) 600V
Collector Current (IC) 150A


Product details pictures



2MBI150TA-060-50 FUJI Dual IGBT Module 600V 150A High-Speed Power Semiconductor for Industrial Applications 0


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FAQ


Q1: 2MBI150TA-060-50 still available?
A: Yes, Active lifecycle status.
Q2: Maximum switching frequency?
A: Up to 20kHz.
Q3: Heat sink required?
A: Yes, external heat sink mandatory.